VS1401AMH 100V 130A N-Cha
features enhancement mode very low on-resistance rds(on) @ vgs=10 v 100% avalanche test
v(br)dss drain-source breakdown voltage 100 v vgs gate-source voltage ±25 v is diode continuous forward current tc = 25°c 200 a id continuous drain current @vgs=10v (silicon limited) tc = 25°c 200 a id continuous drain current @vgs=10v (silicon limited) tc = 100°c 142 a id continuous drain current @vgs=10v (wire bond limited) tc = 25°c 130 a idm pulse drain current tested tc =25°c 800 a idsm continuous drain current @vgs=10v ta=25°c 15 a ta=70°c 12 a eas avalanche energy, single pulsed 900 mj pd maximum power dissipation tc =25°c 375 w pdsm maximum power dissipation ta=25°c 2 w tstg,tj storage and junction temperature range -55 to 175 °c
rθjc thermal resistance, junction-to-case 0.4 0.5 °c/w rθja thermal resistance, junction-to-ambient 62.5 75 °c/w
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